msa-0736 cascadable silicon bipolar mmic amplifier data sheet features cascadable 50 ? gain block low operating voltage: 4.0 v typical v d 3 db bandwidth: dc to 2.4 ghz 13.0 db typical gain at 1.0 ghz unconditionally stable (k>1) cost effective ceramic microstrip package description the msa-0736 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general purpose 50 ? gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. the msa-series is fabricated using avagos 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold met- allization to achieve excellent performance, unifor- mity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 5 v v d = 4.0 v rfc (optional) in out msa 4 1 2 3 36 micro-x package
2 msa-0736 absolute maximum ratings parameter absolute maximum [1] device current 60 ma power dissipation [2,3] 275 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance [2,5] : jc = 155 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.5 mw/ c for t c > 157 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. ths small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 12.5 13.5 14.5 ? g p gain flatness f = 0.1 to 1.3 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 2.4 input vswr f = 0.1 to 2.5 ghz 2.0:1 output vswr f = 0.1 to 2.5 ghz 1.8:1 nf 50 ? noise figure f = 1.0 ghz db 4.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 5.5 ip 3 third order intercept point f = 1.0 ghz dbm 19.0 t d group delay f = 1.0 ghz psec 140 v d device voltage v 3.6 4.0 4.4 dv/dt device voltage temperature coefficient mv/ c C7.0 note: 1. the recommended operating current range for this device is 15 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 22 ma, z o = 50 ? units min. typ. max. vswr ordering information part numbers no. of devices comments msa-0736-blkg 100 bulk MSA-0736-TR1G 1000 7" reel
3 msa-0736 typical scattering parameters (z o = 50 ? , t a = 25 c, i d = 22 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .13 C3 13.5 4.71 175 C19.0 .112 2 .29 C7 0.2 .13 C6 13.4 4.69 170 C18.5 .119 3 .29 C12 0.4 .14 C13 13.4 4.68 160 C18.6 .118 6 .29 C24 0.6 .16 C20 13.3 4.64 150 C18.4 .120 7 .28 C35 0.8 .19 C29 13.2 4.60 140 C18.1 .125 8 .28 C47 1.0 .21 C40 12.9 4.42 129 C17.6 .131 10 .27 C58 1.5 .27 C71 12.2 4.07 104 C16.5 .149 10 .24 C83 2.0 .32 C107 11.5 3.74 79 C15.6 .165 7 .19 C103 2.5 .37 C134 10.3 3.26 62 C15.3 .173 5 .15 C113 3.0 .43 C160 8.8 2.76 44 C15.4 .171 0 .14 C120 3.5 .47 C179 7.5 2.37 27 C15.3 .173 C4 .16 C120 4.0 .49 167 6.2 2.05 12 C15.2 .168 C6 .21 C121 5.0 .51 134 4.0 1.59 C15 C15.2 .173 C11 .28 C135 6.0 .60 96 2.1 1.27 C42 C14.6 .185 C16 .29 C167 s 11 s 21 s 12 s 22 g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 22 ma. 1 02345 v d (v) figure 2. device current vs. voltage. figure 3. power gain vs. current. 0 2 4 6 8 10 12 14 0 10 20 30 40 gain flat to dc i d (ma) t c = +125 c t c = +25 c t c = ?5 c i d (ma) g p (db) 4 6 8 10 12 16 14 10 20 30 40 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz 3 4 5 6 12 13 14 ?5 ?5 +25 +85 +125 4 5 6 p 1 db (dbm) nf (db) nf g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =22ma. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. ? 0 3 6 9 12 15 p 1 db (dbm) i d = 40 ma i d = 15 ma i d = 22 ma 4.5 4.0 5.0 5.5 6.0 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 p 1 db g p i d = 15 ma i d = 22 ma i d = 40 ma typical performance, t a = 25 c (unless otherwise noted)
36 micro-x package dimensions 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countrie s. data subject to change. copyright ? 2007 avago technologies, limited. all rights reserved. obsoletes 5989-2741en av02-0305en - april 12, 2007
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